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march 2015 docid025190 rev 3 1 / 13 this is information on a product in full production. www.st.com STP90N6F6 n - channel 60 v, 0.0057 typ., 90 a stripfet? f6 power mosfet in a to - 220 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STP90N6F6 60 v 0.0063 90 a 136 w ? very low on- resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is an n - channel power mosfet developed using the stripfet? f6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: device summary order code marking package packaging STP90N6F6 90n6f6 to -220 tube
contents STP90N6F6 2 / 13 docid025190 rev 3 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.1 electrical characteristics (curves) ...................................................... 6 3 test circui ts ..................................................................................... 8 4 package information ....................................................................... 9 4.1 to - 220 type a package information ................................................ 10 5 revision history ............................................................................ 12
STP90N6F6 electrical ratings docid025190 rev 3 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 60 v v gs gate - source voltage 20 v i d drain current (continuous) at t c = 25 c 90 a i d drain current (continuous) at t c = 100 c 70 a i dm (1) drain current (pulsed) 360 a p tot total dissipation at t c = 25 c 136 w t stg storage temperature - 55 to 175 c t j max. operating junction temperature 175 c notes: (1) pulse width limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max. 1.1 c/w r thj - amb thermal resistance junction - ambient max. 62.5 c/w table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 45 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av , v dd = 43 v) 152 mj
electrical charact eristics STP90N6F6 4 / 13 docid025190 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified). table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 250 a 60 v i dss zero gate voltage drain current v gs = 0 v, v ds = 60 v 10 a v gs = 0 v, v ds = 60 v, t j = 125 c 100 a i gss gate - body leakage current v ds = 0 v, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain - source on- resistance v gs = 10 v, i d = 45 a 0.0057 0.0063 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v - 4295 - pf c oss output capacitance - 292 - pf c rss reverse transfer capacitance - 190 - pf q g total gate charge v dd = 30 v, i d = 90 a, v gs = 10 v (see figure 14: "gate charge test circuit" ) - 74.9 - nc q gs gate - source charge - 19 - nc q gd gate - drain charge - 18.3 - nc r g intrinsic gate resistance f = 1 mhz open drain - 2.2 - table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 30 v, i d = 45 a r g = 4.7 , v gs = 10 v (see figure 13: "switching times test circuit for resistive load" and figure 18: "switching time waveform" ) - 22 - ns t r rise time - 42 - ns t d(off) turn - off- delay time - 73 - ns t f fall time - 16 - ns
STP90N6F6 electrical characteristics docid025190 rev 3 5 / 13 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage v gs = 0 v, i sd = 90 a - 1.3 v t rr reverse recovery time i sd = 90 a, di/dt = 100 a/s, v dd = 48 v, t j = 25 c (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 49 ns q rr reverse recovery charge - 8.5 c i rrm reverse recovery current - 0.3 a notes: (1) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STP90N6F6 6 / 13 docid025190 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : normalized gate threshold voltage vs. temperature figure 7 : normalized v(br)dss vs. temperature v (br)dss t j (c) (norm) 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 i d =250 a -55 -5 -30 70 20 45 95 120 gipg180320141610s a
STP90N6F6 electrical characteristics docid025190 rev 3 7 / 13 figure 8 : static drain - source on - resistance figure 9 : normalized on - resistance vs. temperature figure 10 : gate charge vs. gate - source voltage figure 11 : capacitance variations figure 12 : source - drain diode forward characteristics
test circuits STP90N6F6 8 / 13 docid025190 rev 3 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform am01469v1 v dd 47 k 1 k 47 k 2.7 k 1 k 12 v v i v gs 2200 f p w i g = const 100 100 nf d.u.t. v g am01470v1 a d d.u. t . s b g 25 a a b b r g g f ast diode d s l=100 h f 3.3 1000 f v dd d.u. t . v (b r )d s s v dd v dd v d i dm i d am01472v1 am01473v1 0 v gs 90% v ds t on 90% 10% 90% 10% t d(on) t r t t d(off) t f 10% 0 off
STP90N6F6 package information docid025190 rev 3 9 / 13 4 package i n formation in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STP90N6F6 10 / 13 docid025190 rev 3 4.1 to - 220 type a package information figure 19 : to - 220 type a package outline
STP90N6F6 package information docid025190 rev 3 11 / 13 table 9: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
revision history STP90N6F6 12 / 13 docid025190 rev 3 5 revision history table 10: document revision history date revision changes 03- sep - 2013 1 initial release. 03- apr- 2014 2 document status promoted from preliminary to production data. updated new section curves. minor text changes. 13- mar -2015 3 minor text edits throughout document on cover page: updated title descritpion, features table and descritpion in section 1 electrical ratings: renamed and updated table 5 "static" (was on/off s tates), table 6 "dynamic", table 7 "switching times", table 8 "source - drain diode" in section 2 electrical characteristics: updated table 2 "absolute maximum ratings" and table 4 "avalanche charateristics"; updated section 2.1 electrical characteristics ( curves)
STP90N6F6 docid025190 rev 3 13 / 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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